* VDSS = 1200 V at Tvj = -55175°C
* IDDC = 38 A at TC = 25°C
* RDS(on) = 60 mΩ at VGS = 20 V, Tvj = 25°C
* New performance-optimized chip technology (Gen1p) with improved RDSon
* A
* Best in class switching energy for lower switching losses and reduced cool
AIMBG120R060M1 Datasheet (1.63 MB)
AIMBG120R060M1
1.63 MB
Silicon carbide mosfet.
AIMBG120R060M1 CoolSiC™ 1200 V SiC Trench MOSFET Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET PG-TO263-7-HV-ND5.8 Fea.
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