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AIMBG120R120M1

MOSFET

AIMBG120R120M1 Features

* VDSS = 1200 V at Tvj = -55175°C

* IDDC = 22 A at TC = 25°C

* RDS(on) = 117 mΩ at VGS = 20 V, Tvj = 25°C

* New performance-optimized chip technology (Gen1p) with improved RDSon

* A

* Best in class switching energy for lower switching losses and reduced coo

AIMBG120R120M1 General Description

Pin definition:

* Pin 1 - Gate

* Pin 2 - Kelvin sense contact

* Pin 3…7 - Source

* Tab - Drain Note: The source and sense pins are not exchangeable, their exchange might lead to malfunction Type AIMBG120R120M1 Package PG-TO263-7-HV-ND5.8 Marking AS120MM1 Datasheet.

AIMBG120R120M1 Datasheet (1.60 MB)

Preview of AIMBG120R120M1 PDF

Datasheet Details

Part number:

AIMBG120R120M1

Manufacturer:

Infineon ↗

File Size:

1.60 MB

Description:

Mosfet.
AIMBG120R120M1 CoolSiC™ 1200 V SiC Trench MOSFET Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET PG-TO263-7-HV-ND5.8 Fea.

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