AIMBG120R080M1 - 1200V SiC Trench MOSFET

Infineon

AIMBG120R080M1 Datasheet Preview — Preview of AIMBG120R080M1 PDF

Datasheet Details

Part number	AIMBG120R080M1
Manufacturer	Infineon ↗
File Size	1.58 MB
Description	1200V SiC Trench MOSFET
Datasheet	AIMBG120R080M1-Infineon.pdf

AIMBG120R080M1 Product details

Description

Pin definition: Pin 1 - Gate Pin 2 - Kelvin sense contact Pin 3…7 - Source Tab - Drain Note: The source and sense pins are not exchangeable, their exchange might lead to malfunction Type AIMBG120R080M1 Package PG-TO263-7-U01 Marking AS80MM1 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.20 2024-11-12 AIMBG120R080M1 CoolSiC™ 1200 V SiC Trench MOSFET Table of contents Table

Features

VDSS = 1200 V at Tvj = -40200°C.
IDDC = 30 A at TC = 25°C.
RDS(on) = 80 mΩ at VGS = 20 V, Tvj = 25°C.
New performance-optimized chip technology (Gen1p) with improved RDSon.
A.
Best in class switching energy for lower switching losses and reduced cooling efforts.
Lowest device capacitances for higher switching speeds and higher power density.
A combination of low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on and ena.

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Published: Jul 20, 2025 |