AIMBG120R080M1 Datasheet - Infineon

AIMBG120R080M1 - 1200V SiC Trench MOSFET

AIMBG120R080M1 Features

* VDSS = 1200 V at Tvj = -40200°C

* IDDC = 30 A at TC = 25°C

* RDS(on) = 80 mΩ at VGS = 20 V, Tvj = 25°C

* New performance-optimized chip technology (Gen1p) with improved RDSon

* A

* Best in class switching energy for lower switching losses and reduced cool

Datasheet Details

AIMBG120R080M1

1.58 MB

1200v sic trench mosfet.

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