AIMBG120R080M1 1200V SiC Trench MOSFET

Infineon

Description

AIMBG120R080M1 CoolSiC™ 1200 V SiC Trench MOSFET Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET PG-TO263-7-HV-ND5.8 Fea.
Pin definition:. Pin 1 - Gate. Pin 2 - Kelvin sense contact. Pin 3…7 - Source. Tab - Drain Note: The source and se.

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Datasheet Specifications

Part number: AIMBG120R080M1
Manufacturer: Infineon ↗
File Size: 1.58 MB
Datasheet: AIMBG120R080M1-Infineon.pdf
Description: 1200V SiC Trench MOSFET

Features

* VDSS = 1200 V at Tvj = -40200°C
* IDDC = 30 A at TC = 25°C
* RDS(on) = 80 mΩ at VGS = 20 V, Tvj = 25°C
* New performance-optimized chip technology (Gen1p) with improved RDSon
* A
* Best in class switching energy for lower switching losses and reduced cool

Applications

* SMT package for automated assembly and reduced system costs TAB 1 234 5 6 7 Copyright © Infineon Technologies AG 2021. All rights reserved. Potential applications
* On-board charger
* DC/DC converter
* Auxiliary drives Product validation
* Qualified for A

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AIMBG120R080M1 1200V SiC Trench MOSFET Infineon

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