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AIMBG120R160M1 Datasheet - Infineon

AIMBG120R160M1 1200 V SiC Trench MOSFET

AIMBG120R160M1 Features

* VDSS = 1200 V at Tvj = -55175°C

* IDDC = 17 A at TC = 25°C

* RDS(on) = 160 mΩ at VGS = 20 V, Tvj = 25°C

* New performance-optimized chip technology (Gen1p) with improved RDSon

* A

* Best in class switching energy for lower switching losses and reduced coo

AIMBG120R160M1 Datasheet (1.58 MB)

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Datasheet Details

Part number:

AIMBG120R160M1

Manufacturer:

Infineon ↗

File Size:

1.58 MB

Description:

1200 v sic trench mosfet.

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AIMBG120R160M1 1200 SiC Trench MOSFET Infineon

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