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AIMW120R045M1 Datasheet - Infineon

Silicon Carbide MOSFET

* Revolutionary semiconductor material - Silicon Carbide

* Very low switching losses

* Threshold-free on state characteristic

* IGBT-compatible driving voltage (15V for turn-on)

* 0V turn-off gate voltage

* Benchmark gate threshold voltage, VGS(th)=4.5V

* Fully controllab

AIMW120R045M1

1.33 MB

Silicon carbide mosfet.

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AIMW120R045M1 Silicon Carbide MOSFET Infineon

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