AIMW120R045M1 Silicon Carbide MOSFET

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Description

AIMW120R045M1 AIMW120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET .

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Datasheet Specifications

Part number: AIMW120R045M1
Manufacturer: Infineon ↗
File Size: 1.33 MB
Datasheet: AIMW120R045M1-Infineon.pdf
Description: Silicon Carbide MOSFET

Features

* Revolutionary semiconductor material - Silicon Carbide
* Very low switching losses
* Threshold-free on state characteristic
* IGBT-compatible driving voltage (15V for turn-on)
* 0V turn-off gate voltage
* Benchmark gate threshold voltage, VGS(th)=4.5V
* Fully controllab

Applications

* On-board Charger/PFC
* Booster/DC-DC Converter
* Auxilliary Inverter Product Validation Qualified for Automotive Applications. Product Validation according to AEC-Q100/101” Table 1 Key Performance and Package Parameters Type ID RDS(on),typ VDS (TC=25°C, (Tvj=25°C, ID=20A, Tvjmax

AIMW120R045M1 Distributors

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AIMW120R045M1 Silicon Carbide MOSFET Infineon

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