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AIMW120R060M1H MOSFET

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Description

AIMW120R060M1H AIMW120R060M1H CoolSiC™ Automotive 1200V SiC Trench MOSFET 1200V G1 Silicon Carbide MOSFET .

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Features

* Revolutionary semiconductor material - Silicon Carbide Gate pin 1
* Very low switching losses
* Threshold-free on state characteristic
* IGBT-compatible driving voltage (18V for turn-on)
* 0V turn-off gate voltage
* Benchmark gate threshold vo

Applications

* On-board Charger/PFC
* Booster/DC-DC Converter Product validation Qualified for Automotive Applications. Product Validation according to AEC-Q100/101 Drain pin 2 Sou rce pin 3 Table 1 Key Performance and Package Parameters Type VDS ID RDS(on),typ (Tvj = 25°C, ID = 13A, Tvj

AIMW120R060M1H Distributors

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