AUIRF7478Q

Power MOSFET

Infineon

AUIRF7478Q Features

* Advanced Planar Technology

* Low On-Resistance

* Logic Level Gate Drive

* Dynamic dv/dt Rating

* 150°C Operating Temperature

* Fast Switching

* Repetitive Avalanche Allowed up to Tjmax

* Lead-Free, RoHS Compliant

* Automotive Qualified

* S1 S2 S3 G4 AA 8

AUIRF7478Q General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel.

AUIRF7478Q Datasheet (374.74 KB)