AUIRF7665S2, AUIRF7665S2TR Datasheet - Infineon

AUIRF7665S2 - Power MOSFET

The AUIRF7665S2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET® package is compatible with existing layout geometries used in pow.

AUTOMOTIVE GRADE AUIRF7665S2TR Advanced Process Technology Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency Low Qg for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI Low Parasitic Inductance for Reduced Ringing and Lower EMI Delivers up to 100W per Channel into 8 with No Heatsink Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness.

AUIRF7665S2 Features

* combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems. Base Part Number AUIRF7665S2 Package Type DirectFET Small Can Standard Pack Form Quantity Tape and Reel 4800 Orderable Part Number AUIRF7665S2TR Absolute Maximum Ratings Stresses beyond t

AUIRF7665S2TR-Infineon.pdf