AUIRF7665S2TR1, AUIRF7665S2TR Datasheet - International Rectifier

AUIRF7665S2TR1 N-Channel MOSFET

The AUIRF7665S2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compatible with existing layout geometries used in.

PD - 96286 AUTOMOTIVE GRADE Advanced Process Technology Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency Low Qg for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI Low Parasitic Inductance for Reduced Ringing and Lower EMI Delivers up to 100W per Channel into 8Ω with No Heatsink Dual Sided Cooling 175°C Operating Temperature .

AUIRF7665S2TR1 Features

* combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems. Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C www.DataSheet4U.com ID @ TC = 100°C ID @ TA = 25°C ID @ TC = 25°C IDM PD @TC = 25°C PD @TA = 25°C EAS EAS(tested) IAR EAR TP TJ TSTG Drai

AUIRF7665S2TR_InternationalRectifier.pdf