AUIRF7640S2TR1 Datasheet - International Rectifier

AUIRF7640S2TR1 DirectFET Power MOSFET

The AUIRF7640S2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compatible with existing layout geometries used in.

DataSheet.in PD -97551 AUTOMOTIVE GRADE Advanced Process Technology Optimized for Class D Audio Amplifier and High Speed Switching Applications Low Rds(on) for Improved Efficiency Low Qg for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI Low Parasitic Inductance for Reduced Ringing and Lower EMI Delivers up to 100W per Channel into an 8Ω Load Dual Sided Coolin.

AUIRF7640S2TR1 Features

* combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier and other high speed switching systems. Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C ID @ TA = 25°C ID @ TC = 25°C IDM PD @TC = 25°C PD @TA = 25°C EAS EAS (tested) IAR EAR TP

AUIRF7640S2TR1 Datasheet (327.28 KB)