AUIRGSL30B60K Datasheet - Infineon

AUIRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR

AUIRGSL30B60K Features

* Low VCE (on) Non Punch Through IGBT Technology

* 10µs Short Circuit Capability

* Square RBSOA

* Positive VCE (on) Temperature Coefficient.

* Maximum Junction Temperature rated at 175°C

* Lead-Free, RoHS Compliant

* Automotive Qualified

* Benefits

* Benchma

Datasheet Details

AUIRGSL30B60K

394.85 KB

Insulated gate bipolar transistor.

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