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AUIRGSL30B60K, AUIRGS30B60K INSULATED GATE BIPOLAR TRANSISTOR

AUIRGSL30B60K Description

AUTOMOTIVE GRADE AUIRGS30B60K AUIRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR .

AUIRGSL30B60K Features

* Low VCE (on) Non Punch Through IGBT Technology
* 10µs Short Circuit Capability
* Square RBSOA
* Positive VCE (on) Temperature Coefficient.
* Maximum Junction Temperature rated at 175°C
* Lead-Free, RoHS Compliant
* Automotive Qualified
* Benefits
* Benchma

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: AUIRGSL30B60K, AUIRGS30B60K. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
AUIRGSL30B60K, AUIRGS30B60K
Manufacturer
Infineon ↗
File Size
394.85 KB
Datasheet
AUIRGS30B60K-Infineon.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: AUIRGSL30B60K, AUIRGS30B60K.
Please refer to the document for exact specifications by model.

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📌 All Tags

INSULATED GATE BIPOLAR TRANSISTOR Infineon
Infineon AUIRGSL30B60K-like datasheet