AUIRGSL4062D1, AUIRGB4062D1 Datasheet - Infineon

AUIRGSL4062D1, AUIRGB4062D1, IGBT

AUTOMOTIVE GRADE AUIRGB4062D1 AUIRGS4062D1 AUIRGSL4062D1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features

* Low VCE (on) Trench IGBT Technology
* Low Switching Losses
* 5µs short circuit SOA
* Square RBSOA
* 100% of the parts tested for ILM
* Positive VCE (on) Temperature Coefficient.

* Ultra Fast Soft Recovery Co-pak Diode
* Tighter Distribution of Parameters
* Lead

Applications

* Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
* Rugged Transient Performance for Increased Reliability
* Excellent Current Sharing in Parallel Operation
* Low EMI E C G CE G AUIRGB4062D1 AUIRGS4062D1 TO-220AB D2Pak G Gate C C

AUIRGB4062D1-Infineon.pdf