BFR750L3RH Datasheet - Infineon

BFR750L3RH, Linear Low Noise SiGe:C Bipolar RF Transistor

Linear Low Noise SiGe:C Bipolar RF Transistor * High gain ultra low noise RF transistor * Based on Infineon's reliable high volume Sil.

Applications

* up to 10 GHz
* Ideal for WLAN and all 5-6 GHz applications
* High OIP3 and P-1dB for driver stages
* High maximum stable and available gain Gms = 21 dB at 1.8 GHz, Gma = 11.5 dB at 6 GHz
* Pb-free (RoHS compliant) and halogen-free very thin small leadless package (pac

BFR750L3RH-Infineon.pdf