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BSC005N03LS5 MOSFET

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Description

BSC005N03LS5 MOSFET OptiMOSTM 5 Power-Transistor, 30 V .

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Features

* Very low on-resistance RDS(on) @ VGS=4.5 V
* Optimized charges for fast switching
* Optimized QGD/QGS for induced turn on ruggedness
* Superior thermal resistance
* N-channel
* 100% avalanche tested
* Pb-free lead plating; RoHS compliant

Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS 30 V RDS(on),max 0.55 mΩ ID 433 A Qoss 70 nC QG(0V. .4.5V) 59 nC PG-TDSON-8 8 7 6 5 5 6 7 8 Pin 1 2 3 4 4 3 2 1 Drain Pin 5-8 Gate
* 1 Pin 4 Source
* 1: Internal body diode Pin 1-3 Type / Ordering Code

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