BSZ900N15NS3G Datasheet - Infineon

BSZ900N15NS3G Power MOSFET

s OptiMOSTM3 Power-Transistor Package Marking N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 150 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to IEC61249-2-21 BSZ900N15NS3 G Product Summary V DS R DS(on),max ID 150 V 90 mΩ 13 A PG-TSDSON-8 Type BSZ900N15NS3 G Package PG-TSD.

BSZ900N15NS3G Datasheet (322.24 KB)