BSZ900N20NS3G Power MOSFET

Infineon

BSZ900N20NS3G Description

Type OptiMOSTM3 Power-Transistor .

BSZ900N20NS3G Features

* Optimized for dc-dc conversion
* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Low on-resistance R DS(on)
* 150 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC1) for

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Datasheet Details

Part number: BSZ900N20NS3G
Manufacturer: Infineon ↗
File Size: 568.48 KB
Datasheet: BSZ900N20NS3G_Infineon.pdf
Description: Power MOSFET

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