Part number:
DF200R07W2H3_B77
Manufacturer:
File Size:
732.34 KB
Description:
Igbt.
* Electrical features - VCES = 650 V - IC nom = 100 A / ICRM = 200 A - Increased blocking voltage capability up to 650 V - Low inductive design - Low switching losses - Low VCE,sat
* Mechanical features - Al2O3 substrate with low thermal resistance - Compact design - PressFIT contact
DF200R07W2H3_B77 Datasheet (732.34 KB)
DF200R07W2H3_B77
732.34 KB
Igbt.
📁 Related Datasheet
DF200R12KE3 IGBT (eupec)
DF200R12PT4_B6 IGBT (Infineon)
DF200R12W1H3F_B11 IGBT (Infineon)
DF200R12W1H3_B27 IGBT (Infineon)
DF200 2.0A GLASS PASSIVATED SINGLE PHASE BRIDGE RECTIFIER (WON-TOP)
DF2005 2A Miniature Glass Passivated Single-Phase Bridge Rectifiers (CITC)
DF2005-G Glass Passivated Bridge Rectifiers (Comchip)
DF2005S GLASS PASSIVATED BRIDGE RECTIFIERS (KD)
DF2005S 2A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER (MIC)
DF2005S Glass Passivated Bridge Rectifier (Eris)