DF200R12W1H3_B27 Datasheet - Infineon

DF200R12W1H3_B27 IGBT

Technische Information / Technical Information IGBT-Module IGBT-modules DF200R12W1H3_B27 Vorläufige Daten / Preliminary Data Typische Anwendungen Solar Anwendungen Elektrische Eigenschaften Niedrige Schaltverluste Mechanische Eigenschaften Al2O3 Substrat mit kleinem thermischen Widerstand Integrierter NTC Temperatur Sensor Kompaktes Design PressFIT Verbindungstechnik J VCES = 1200V IC nom = 30A / ICRM = 60A Typical Applications

DF200R12W1H3_B27 Features

* Low Switching Losses Mechanical Features

* Al2O3 Substrate with Low Thermal Resistance

* Integrated NTC temperature sensor

* Compact design

* PressFIT Contact Technology Module Label Code Barcode Code 128 DMX - Code prepared by: CM approved by: MB Content

DF200R12W1H3_B27 Datasheet (747.00 KB)