DF200R12W1H3F_B11 Datasheet - Infineon

DF200R12W1H3F_B11 IGBT

DF200R12W1H3F_B11 EasyPACK Modul mit schnellem Trench/Feldstopp High-Speed 3 IGBT und SiC Diode und PressFIT / NTC EasyPACK module with fast Trench/Fieldstop High-Speed 3 IGBT and SiC diode and PressFIT / NTC Typische Anwendungen Solar Anwendungen Elektrische Eigenschaften CoolSiC (TM) Schottky Diode Gen 5 High Speed IGBT H3 Niedrige Schaltverluste Mechanische Eigenschaften Al2O3 Substrat mit kleinem thermischen Widerstand Integrierter.

DF200R12W1H3F_B11 Features

* CoolSiC (TM) Schottky diode gen 5

* High speed IGBT H3

* Low switching losses Mechanical Features

* Al2O3 substrate with low thermal resistance

* Integrated NTC temperature sensor

* Compact design

* PressFIT contact technology Module Label C

DF200R12W1H3F_B11 Datasheet (853.15 KB)