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DF200R12W1H3F_B11 IGBT

DF200R12W1H3F_B11 Description

DF200R12W1H3F_B11 EasyPACK Modul mit schnellem Trench/Feldstopp High-Speed 3 IGBT und SiC Diode und PressFIT / NTC EasyPACK module with fast Trench/Fi.

DF200R12W1H3F_B11 Features

* CoolSiC (TM) Schottky diode gen 5
* High speed IGBT H3
* Low switching losses Mechanical Features
* Al2O3 substrate with low thermal resistance
* Integrated NTC temperature sensor
* Compact design
* PressFIT contact technology Module Label C

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IGBT Infineon
Infineon DF200R12W1H3F_B11-like datasheet