DF200R12W1H3F_B11

IGBT

Infineon

DF200R12W1H3F_B11 Features

* CoolSiC (TM) Schottky diode gen 5

* High speed IGBT H3

* Low switching losses Mechanical Features

* Al2O3 substrate with low thermal resistance

* Integrated NTC temperature sensor

* Compact design

* PressFIT contact technology Module Label C

DF200R12W1H3F_B11 Datasheet (853.15 KB)

DF200R12W1H3F_B11 Datasheet Preview — Preview of DF200R12W1H3F_B11 PDF

Datasheet Details

Part number:

DF200R12W1H3F_B11

Manufacturer:

Infineon ↗

File Size:

853.15 KB

Description:

Igbt.
DF200R12W1H3F_B11 EasyPACK Modul mit schnellem Trench/Feldstopp High-Speed 3 IGBT und SiC Diode und PressFIT / NTC EasyPACK module with fast Trench/Fi.

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DF200R12W1H3F_B11 IGBT Infineon

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