DF200R12W1H3F_B11 IGBT

Infineon

Description

DF200R12W1H3F_B11 EasyPACK Modul mit schnellem Trench/Feldstopp High-Speed 3 IGBT und SiC Diode und PressFIT / NTC EasyPACK module with fast Trench/Fi.

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DF200R12W1H3F_B11 Datasheet Preview — Preview of DF200R12W1H3F_B11 PDF

Datasheet Specifications

Part number: DF200R12W1H3F_B11
Manufacturer: Infineon ↗
File Size: 853.15 KB
Datasheet: DF200R12W1H3F_B11-Infineon.pdf
Description: IGBT

Features

* CoolSiC (TM) Schottky diode gen 5
* High speed IGBT H3
* Low switching losses Mechanical Features
* Al2O3 substrate with low thermal resistance
* Integrated NTC temperature sensor
* Compact design
* PressFIT contact technology Module Label C

DF200R12W1H3F_B11 Distributors

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DF200R12W1H3F_B11 IGBT Infineon

Infineon DF200R12W1H3F_B11-like datasheet