Datasheet Details
Part number:
DF200R12W1H3F_B11
Manufacturer:
File Size:
853.15 KB
Description:
Igbt.
DF200R12W1H3F_B11-Infineon.pdf
Datasheet Details
Part number:
DF200R12W1H3F_B11
Manufacturer:
File Size:
853.15 KB
Description:
Igbt.
DF200R12W1H3F_B11, IGBT
DF200R12W1H3F_B11 EasyPACK Modul mit schnellem Trench/Feldstopp High-Speed 3 IGBT und SiC Diode und PressFIT / NTC EasyPACK module with fast Trench/Fieldstop High-Speed 3 IGBT and SiC diode and PressFIT / NTC Typische Anwendungen Solar Anwendungen Elektrische Eigenschaften CoolSiC (TM) Schottky Diode Gen 5 High Speed IGBT H3 Niedrige Schaltverluste Mechanische Eigenschaften Al2O3 Substrat mit kleinem thermischen Widerstand Integrierter
DF200R12W1H3F_B11 Features
* CoolSiC (TM) Schottky diode gen 5
* High speed IGBT H3
* Low switching losses Mechanical Features
* Al2O3 substrate with low thermal resistance
* Integrated NTC temperature sensor
* Compact design
* PressFIT contact technology Module Label C
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