DF23MR12W1M1P_B11 Datasheet - Infineon

DF23MR12W1M1P_B11 MOSFET

DF23MR12W1M1P_B11 EasyPACK™ Modul mit CoolSiC™ Trench MOSFET und PressFIT / NTC / TIM EasyPACK™ module with CoolSiC™ Trench MOSFET and PressFIT / NTC / TIM Vorläufige Daten / Preliminary Data Potentielle Anwendungen Solar Anwendungen Elektrische Eigenschaften CoolSiCTM Schottky Diode Gen 5 Hohe Stromdichte Niederinduktives Design Niedrige Schaltverluste Mechanische Eigenschaften Integrierter NTC Temperatur Sensor PressFIT Ver.

DF23MR12W1M1P_B11 Features

* CoolSiCTM Schottky diode gen 5

* High current density

* Low inductive design

* Low switching losses Mechanical Features

* Integrated NTC temperature sensor

* PressFIT contact technology

* Rugged mounting due to integrated mounting clamps

DF23MR12W1M1P_B11-Infineon.pdf