IDH06G65C5 - Silicon Carbide Diode

Infineon

IDH06G65C5 Datasheet Preview — Preview of IDH06G65C5 PDF

Datasheet Details

Part number	IDH06G65C5
Manufacturer	Infineon ↗
File Size	1.14 MB
Description	Silicon Carbide Diode
Datasheet	IDH06G65C5-Infineon.pdf

IDH06G65C5 Product details

Description

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology.The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).The new thinQ!™ Generation 5 has been designed

Features

Revolutionary semiconductor material - Silicon Carbide.
Benchmark switching behavior.
No reverse recovery/ No forward recovery.
Temperature independent switching behavior.
High surge current capability.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

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Published: Jun 14, 2020 |