IGC31T65QE Datasheet - Infineon

IGBT

IGC31T65QE Features

* 650V Trench & Field Stop technology

* high speed switching series third generation

* low VCE(sat)

* low EMI

* low turn-off losses

* positive temperature coefficient

* qualified according to JEDEC for target applications Recommended for:

* discrete components and m

IGC31T65QE General Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 IGC31T65QE Revision History Version Subjects (major changes since last revision) Date Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Techn.

IGC31T65QE Datasheet (228.55 KB)