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IGC36T120T6L
IGBT4 Low Power Chip
FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling
This chip is used for: • low / medium power modules
Applications: • low / medium power drives
C G
E
Chip Type IGC36T120T6L
VCE ICn 1200V 35A
Die Size 6.36 x 5.67 mm2
Package sawn on foil
MECHANICAL PARAMETER Raster size Emitter pad size Gate pad size Area total / active Thickness Wafe r size Flat position Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
6.36 x 5.67
2 x ( 1.95 x 4.18 ) 0.826 x 1.31
mm 2
36.1 / 24.
IGC36T120T6L Datasheet
