and Applications3 Mechanical Parameters3 Maximum Ratings 4 Static and Electrical Characteristics 4 Further Electrical Characteristics 5 Chip Drawing6 Revision History 7 R
✔ IGC36T120T8L Application
Mechanical Parameters3 Maximum Ratings 4 Static and Electrical Characteristics 4 Further Electrical Charact
IGC39T65QE, Infineon
IGC39T65QE
High Speed IGBT3 Chip
Features • VCES = 650 V • ICn = 75 A • 650 V trench & field stop technology
• High switching speed
• Low VCEsat • Lo.
IGC39T65T8M, Infineon
IGC39T65T8M
IGBT3 Chip Medium Power
Features: 650V Trench & Field Stop technology high short circuit capability, self limiting
short circuit cur.
IGC019S06S1, Infineon
IGC019S06S1
CoolGaNTM Transistor 60 V G3
Features
• Enhancement mode power transistor - normally OFF switch • No reverse recovery charge • Reverse c.
IGC025S08S1, Infineon
IGC025S08S1
CoolGaNTM Transistor 80 V G3
Features
• Enhancement mode power transistor - normally OFF switch • No reverse recovery charge • Reverse c.
IGC033S101, Infineon
IGC033S101
CoolGaNTM Transistor 100 V G3
Features
• Enhancement mode power transistor - normally OFF switch • No reverse recovery charge • Reverse c.
