IGI60F1414A1L Datasheet - Infineon

IPS / 600V GaN half-bridge

IGI60F1414A1L Features

* Two 140 m GaN switches in half-bridge configuration with dedicated high- and low-side isolated gate drivers - Source / sink driving current up to 1 / 2 A - Application-configurable turn-on and turn-off speed

* Fast input-to-output propagation (typ. 47 ns) with extremely small chan

IGI60F1414A1L General Description

IGI60F1414A1L combines a half-bridge power stage consisting of two 140 m (typ. Rdson) / 600 V enhancementmode CoolGaNTM HEMTs with dedicated gate drivers in a small 8 x 8 mm QFN-28 package. In the low-to-medium power area (example application in Figure 1), it is thus ideally suited to support the d.

IGI60F1414A1L Datasheet (1.58 MB)