IGI60L5050A1M Datasheet, Half-bridge, Infineon

IGI60L5050A1M Features

• Half-bridge
• Two 500 m GaN switches in half-bridge configuration with integrated high- and low-side gate drivers - Source / sink driving current +0.29 A / -0.7 A - Application-configurabl

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IGI60L5050A1M

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Infineon ↗

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📄 Datasheet

Description:

Ips / 600v gan half-bridge. IGI60L5050A1M combines a half-bridge power stage consisting of two 500 mΩ (typ. Rdson) / 600 V enhancementmode CoolGaNTM HEMTs with i

IGI60L5050A1M Application

• Applications Description IGI60L5050A1M combines a half-bridge power stage consisting of two 500 mΩ (typ. Rdson) / 600 V enhancementmode CoolGaNTM HE

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IGI60L5050A1M

Infineon

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