IGI60L5050A1M Datasheet (Infineon) - IPS / 600V GaN half-bridge

IGI60L5050A1M, IPS / 600V GaN half-bridge

IGI60L5050A1M combines a half-bridge power stage consisting of two 500 mΩ (typ.

Rdson) / 600 V enhancementmode CoolGaNTM HEMTs with integrated gate drivers in a small 6 x 8 mm TFLGA-27 package.

In the low-to-medium power area (example configuration in Figure 1), it is thus ideally suited to support

IGI60L5050A1M Features

* Two 500 m GaN switches in half-bridge configuration with integrated high- and low-side gate drivers - Source / sink driving current +0.29 A / -0.7 A - Application-configurable turn-on and turn-off speed - Integrated ultra-fast low-resistance bootstrap diode

* Fast input-to-output