IGI60L5050A1M Datasheet - Infineon

IPS / 600V GaN half-bridge

IGI60L5050A1M Features

* Two 500 m GaN switches in half-bridge configuration with integrated high- and low-side gate drivers - Source / sink driving current +0.29 A / -0.7 A - Application-configurable turn-on and turn-off speed - Integrated ultra-fast low-resistance bootstrap diode

* Fast input-to-output

IGI60L5050A1M General Description

IGI60L5050A1M combines a half-bridge power stage consisting of two 500 mΩ (typ. Rdson) / 600 V enhancementmode CoolGaNTM HEMTs with integrated gate drivers in a small 6 x 8 mm TFLGA-27 package. In the low-to-medium power area (example configuration in Figure 1), it is thus ideally suited to support .

IGI60L5050A1M Datasheet (842.31 KB)