IGI60F2020A1L Datasheet (Infineon)

IGI60F2020A1L, IPS

IGI60F2020A1L combines a half-bridge power stage consisting of two 200 m (typ.

Rdson) / 600 V enhancementmode CoolGaNTM HEMTs with dedicated gate drivers in a small 8 x 8 mm QFN-28 package.

In the low-to-medium power area (example application in Figure 1) it is thus ideally suited to support the de

IGI60F2020A1L Features

* Two 200 m GaN switches in half-bridge configuration with dedicated high- and low-side isolated gate drivers - Source / sink driving current up to 1 / 2 A - Application-configurable turn-on and turn-off speed

* Fast input-to-output propagation (typ. 47 ns) with extremely small chan