IGI65D1414A3MS Dual 650V Transistor

Infineon

Description

Public IGI65D1414A3MS Final datasheet CoolGaNTM Transistor Dual 650V G5 140 m / 650 V GaN half-bridge .
IGI65D1414A3MS combines a half-bridge power stage consisting of two 140 m (typ.

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Datasheet Specifications

Part number: IGI65D1414A3MS
Manufacturer: Infineon ↗
File Size: 1.92 MB
Datasheet: IGI65D1414A3MS-Infineon.pdf
Description: Dual 650V Transistor

Features

* Two 140 m GaN switches in half-bridge configuration
* Ultra fast switching
* No reverse-recovery charge
* Capable of reverse conduction
* Low gate charge, low output charge
* Kelvin source connection
* Thermally enhanced 6 x 8 mm QFN-32 pack

Applications

* to both enable fast turn-off and avoid cross-conduction effects. This can be achieved by the well-known RC interface between driver and switch. A few external SMD resistors and capacitors enable easy adaptation to different power topologies. Applications
* Charger and adapters
* Low-

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IGI65D1414A3MS Dual 650V Transistor Infineon

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