IGI65D1414A3MS Datasheet - Infineon

IGI65D1414A3MS Dual 650V Transistor

IGI65D1414A3MS combines a half-bridge power stage consisting of two 140 m (typ. Rdson) / 650 V enhancementmode CoolGaNTM HEMTs in a small 6 x 8 mm QFN-32 package. In the low-to-medium power area (example application in Figure 1), it is thus ideally suited to support the design of high-density AC/DC.

IGI65D1414A3MS Features

* Two 140 m GaN switches in half-bridge configuration

* Ultra fast switching

* No reverse-recovery charge

* Capable of reverse conduction

* Low gate charge, low output charge

* Kelvin source connection

* Thermally enhanced 6 x 8 mm QFN-32 pack

IGI65D1414A3MS Datasheet (1.92 MB)