Part number:
IGP30N65F5
Manufacturer:
File Size:
1.99 MB
Description:
Igbt.
IGP30N65F5 Features
* High speed F5 technology offering
* Best-in-Class efficiency in hard switching and resonant topologies
* 650V breakdown voltage
* Low gate charge QG
* Ideal fit with SIC Schottky Diode in boost converters
* Maximum junction temperature 175°C
* Qualif
IGP30N65F5 Datasheet (1.99 MB)
Datasheet Details
IGP30N65F5
1.99 MB
Igbt.
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