IGP30N65H5 Datasheet - Infineon

IGP30N65H5 IGBT

IGP30N65H5 Features

* High speed H5 technology offering

* Best-in-Class efficiency in hard switching and resonant topologies

* Plug and play replacement of previous generation IGBTs

* 650V breakdown voltage

* Low gate charge QG

* Maximum junction temperature 175°C

* Qualif

Datasheet Details

IGP30N65H5

1.98 MB

Igbt.

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