IKWH50N65EH7 Datasheet - Infineon

IKWH50N65EH7 IGBT

C Type IKWH50N65EH7 G E Package PG-TO247-3-STD-NN4.8 Marking K50EEH7 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2023-04-27 IKWH50N65EH7 High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology.

IKWH50N65EH7 Features

* VCE = 650 V

* IC = 50 A

* Low switching losses

* Very low collector-emitter saturation voltage VCEsat

* Very soft, fast recovery antiparallel diode

* Smooth switching behavior

* Humidity robustness

* Optimized for hard switching, two-

IKWH50N65EH7-Infineon.pdf