IKWH75N65EH7 High speed and low saturation voltage 650V IGBT

Infineon

Description

IKWH75N65EH7 High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology Final datasheet High speed and low saturation voltage 650 V TRE.
C Type IKWH75N65EH7 G E Package PG-TO247-3-STD-NN4.

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Datasheet Specifications

Part number: IKWH75N65EH7
Manufacturer: Infineon ↗
File Size: 1.99 MB
Datasheet: IKWH75N65EH7-Infineon.pdf
Description: High speed and low saturation voltage 650V IGBT

Features

* VCE = 650 V
* IC = 75 A
* Low switching losses
* Very low collector-emitter saturation voltage VCEsat
* Very soft, fast recovery antiparallel diode
* Smooth switching behavior
* Humidity robustness
* Optimized for hard switching, two-

Applications

* Industrial UPS
* EV-Charging
* String inverter
* Welding 2021-10-27 restricted Copyright © Infineon T Product validation

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IKWH75N65EH7 High speed and low saturation voltage 650V IGBT Infineon

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