IKWH75N65EH7 - High speed and low saturation voltage 650V IGBT

Infineon

IKWH75N65EH7 Datasheet Preview — Preview of IKWH75N65EH7 PDF

Datasheet Details

Part number	IKWH75N65EH7
Manufacturer	Infineon ↗
File Size	1.99 MB
Description	High speed and low saturation voltage 650V IGBT
Datasheet	IKWH75N65EH7-Infineon.pdf

IKWH75N65EH7 Product details

Description

C Type IKWH75N65EH7 G E Package PG-TO247-3-STD-NN4.8 Marking K75EEH7 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.20 2023-11-15 IKWH75N65EH7 High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology Table of contents Table of contents Description .

Features

VCE = 650 V.
IC = 75 A.
Low switching losses.
Very low collector-emitter saturation voltage VCEsat.
Very soft, fast recovery antiparallel diode.
Smooth switching behavior.
Humidity robustness.
Optimized for hard switching, two- and three-level topologies.
Complete product spectrum and PSpice Models: http://www. infineon. com/igbt/ TO-247 HCC.
3Pin Potential.

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Published: May 22, 2025 |