IMBG65R040M2H Datasheet - Infineon

IMBG65R040M2H MOSFET

IMBG65R040M2H Features

* Ultra-low switching losses

* Benchmark gate threshold voltage, VGS(th) = 4.5 V

* Robust against parasitic turn-on even with 0 V turn-off gate voltage

* Flexible driving voltage and compatible with bipolar driving scheme

* Robust body diode operation under ha

Datasheet Details

IMBG65R040M2H

1.63 MB

Mosfet.

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