IMBG65R007M2H MOSFET

Infineon

Description

IMBG65R007M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET .

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Datasheet Specifications

Part number: IMBG65R007M2H
Manufacturer: Infineon ↗
File Size: 1.60 MB
Datasheet: IMBG65R007M2H-Infineon.pdf
Description: MOSFET

Features

* Ultra-low switching losses
* Benchmark gate threshold voltage, VGS(th) = 4.5 V
* Robust against parasitic turn-on even with 0 V turn-off gate voltage
* Flexible driving voltage and compatible with bipolar driving scheme
* Robust body diode operation under ha

Applications

* SMPS
* Solar PV inverters
* Energy storage and battery formation
* UPS
* EV charging infrastructure
* Motor drives Product validation Fully qualified according to JEDEC for Industrial Applications Please note: The source and driver source pins are no

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IMBG65R007M2H MOSFET Infineon

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