IMBG65R007M2H Datasheet, Mosfet, Infineon

IMBG65R007M2H Features

  • Mosfet
  • Ultra-low switching losses
  • Benchmark gate threshold voltage, VGS(th) = 4.5 V
  • Robust against parasitic turn-on even with 0 V turn-off gate voltage

PDF File Details

Part number:

IMBG65R007M2H

Manufacturer:

Infineon ↗

File Size:

1.60MB

Download:

📄 Datasheet

Description:

Mosfet. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Datasheet Preview: IMBG65R007M2H 📥 Download PDF (1.60MB)
Page 2 of IMBG65R007M2H Page 3 of IMBG65R007M2H

IMBG65R007M2H Application

  • Applications
  • SMPS
  • Solar PV inverters
  • Energy storage and battery formation
  • UPS
  • EV charging infrastr

TAGS

IMBG65R007M2H
MOSFET
Infineon

📁 Related Datasheet

IMBG65R015M2H - 600V G2 MOSFET (Infineon)
IMBG65R015M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET .

IMBG65R020M2H - MOSFET (Infineon)
IMBG65R020M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET .

IMBG65R022M1H - MOSFET (Infineon)
Public IMBG65R022M1H Final datasheet CoolSiC™ M1 CoolSiC™ MOSFET 650 V G1 The 650 V CoolSiC™ is built over the solid silicon carbide technology devel.

IMBG65R040M2H - MOSFET (Infineon)
IMBG65R040M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET .

IMBG65R050M2H - MOSFET (Infineon)
IMBG65R050M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET .

IMBG65R163M1H - MOSFET (Infineon)
IMBG65R163M1H MOSFET 650 V CoolSiCª M1 SiC Trench Power Device The 650 V CoolSiC™ is built over the solid silicon carbide technology developed in Inf.

IMBG120R008M2H - Silicon Carbide MOSFET (Infineon)
IMBG120R008M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj.

IMBG120R012M2H - 1200V SiC MOSFET (Infineon)
IMBG120R012M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj.

IMBG120R017M2H - Silicon Carbide MOSFET (Infineon)
IMBG120R017M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj.

IMBG120R026M2H - 1200V SiC MOSFET (Infineon)
IMBG120R026M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj.

Stock and price

part
Infineon Technologies AG
SICFET N-CH 650V 238A TO263-7
DigiKey
IMBG65R007M2HXTMA1
236 In Stock
Qty : 100 units
Unit Price : $16.67
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts