* Ultra‑low switching losses
* Benchmark gate threshold voltage, VGS(th) = 4.5 V
* Robust against parasitic turn‑on even with 0 V turn‑off gate voltage
* Flexible driving voltage and compatible with bipolar driving scheme
* Robust body diode operation under ha
IMBG65R010M2H Datasheet (1.37 MB)
IMBG65R010M2H
1.37 MB
650v sic mosfet.
Public IMBG65R010M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology,.
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