Datasheet4U Logo Datasheet4U.com

IMBG65R022M1H - MOSFET

IMBG65R022M1H Description

Public IMBG65R022M1H Final datasheet CoolSiC™ M1 CoolSiC™ MOSFET 650 V G1 The 650 V CoolSiC™ is built over the solid silicon carbide technology devel.
1 Maxi.

IMBG65R022M1H Features

* Optimized switching behavior at higher currents
* Commutation robust fast body diode with low Qfr
* Superior gate oxide reliability
* Tj,max=175°C and excellent thermal behavior
* Lower RDS(on) and pulse current dependency on temperature
* Increased

IMBG65R022M1H Applications

* Telecom and Server SMPS
* UPS (uninterruptable power supplies)
* Solar PV inverters
* EV charging infrastructure
* Energy storage and battery formation
* Class D amplifiers Product validation Fully qualified according to JEDEC for Industrial Applicat

📥 Download Datasheet

Preview of IMBG65R022M1H PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IMB-G41A - MicroATX LGA775 Motherboard User Manual (IEI)
  • IMB10A - Dual Digital Transistor (Rohm)
  • IMB10AFRA - PNP -100mA -50V Complex Digital Transistors (ROHM)
  • IMB11A - Dual Digital Transistor (Rohm)
  • IMB17A - Dual Digital Transistor (Rohm)
  • IMB1A - Dual Digital Transistor (Rohm)
  • IMB201 - 2 Duo ATX Industrial Motherboard (Axiomtek)
  • IMB203 - 2 Duo ATX Industrial Motherboard (Axiomtek)

📌 All Tags

MOSFET Infineon
Infineon IMBG65R022M1H-like datasheet