IMBG65R022M1H Datasheet - Infineon

IMBG65R022M1H MOSFET

IMBG65R022M1H Features

* Optimized switching behavior at higher currents

* Commutation robust fast body diode with low Qfr

* Superior gate oxide reliability

* Tj,max=175°C and excellent thermal behavior

* Lower RDS(on) and pulse current dependency on temperature

* Increased

Datasheet Details

IMBG65R022M1H

1.34 MB

Mosfet.

📁 Related Datasheet

IMBG65R020M2H MOSFET (Infineon)

IMBG65R007M2H MOSFET (Infineon)

IMBG65R010M2H 650V SiC MOSFET (Infineon)

IMBG65R015M2H 600V G2 MOSFET (Infineon)

IMBG65R033M2H 650V SiC MOSFET (Infineon)

IMBG65R040M2H MOSFET (Infineon)

IMBG65R050M2H MOSFET (Infineon)

IMBG65R060M2H 650V SiC MOSFET (Infineon)

TAGS

IMBG65R022M1H IMBG65R022M1H MOSFET Infineon

IMBG65R022M1H Distributor