IMBG65R022M1H Datasheet - Infineon

IMBG65R022M1H, MOSFET

Public IMBG65R022M1H Final datasheet CoolSiC™ M1 CoolSiC™ MOSFET 650 V G1 The 650 V CoolSiC™ is built over the solid silicon carbide technology devel.
1 Maxi.

datasheet Preview Page 1 from Datasheet4u.com

IMBG65R022M1H-Infineon.pdf

IMBG65R022M1H Datasheet Preview — Preview of IMBG65R022M1H PDF

Datasheet Details

Part number:

IMBG65R022M1H

Manufacturer:

Infineon ↗

File Size:

1.34 MB

Description:

MOSFET

Features

* Optimized switching behavior at higher currents
* Commutation robust fast body diode with low Qfr
* Superior gate oxide reliability
* Tj,max=175°C and excellent thermal behavior
* Lower RDS(on) and pulse current dependency on temperature
* Increased

Applications

* Telecom and Server SMPS
* UPS (uninterruptable power supplies)
* Solar PV inverters
* EV charging infrastructure
* Energy storage and battery formation
* Class D amplifiers Product validation Fully qualified according to JEDEC for Industrial Applicat

IMBG65R022M1H Distributors

📁 Related Datasheet

IMB-G41A IMB10A IMB10AFRA IMB11A IMB17A IMB1A

📌 All Tags

IMBG65R022M1H MOSFET Infineon

Infineon IMBG65R022M1H-like datasheet