IMBG65R022M1H Datasheet, Mosfet, Infineon

IMBG65R022M1H Features

• Mosfet
• Optimized switching behavior at higher currents
• Commutation robust fast body diode with low Qfr
• Superior gate oxide reliability
• Tj,max=175°C and

PDF File Details

Part number:

IMBG65R022M1H

Manufacturer:

Infineon ↗

File Size:

1.34MB

Download:

📄 Datasheet

Description:

Mosfet. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

IMBG65R022M1H Application

• Applications
• Telecom and Server SMPS
• UPS (uninterruptable power supplies)
• Solar PV inverters
• EV charging inf

TAGS

IMBG65R022M1H

Infineon

📁 Related Datasheet

IMBG65R020M2H - MOSFET (Infineon)
IMBG65R020M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET .

IMBG65R007M2H - MOSFET (Infineon)
IMBG65R007M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET .

IMBG65R015M2H - 600V G2 MOSFET (Infineon)
IMBG65R015M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET .

IMBG65R040M2H - MOSFET (Infineon)
IMBG65R040M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET .

IMBG65R050M2H - MOSFET (Infineon)
IMBG65R050M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET .

IMBG65R163M1H - MOSFET (Infineon)
IMBG65R163M1H MOSFET 650 V CoolSiCª M1 SiC Trench Power Device The 650 V CoolSiC™ is built over the solid silicon carbide technology developed in Inf.

IMBG120R008M2H - Silicon Carbide MOSFET (Infineon)
IMBG120R008M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj.

IMBG120R012M2H - 1200V SiC MOSFET (Infineon)
IMBG120R012M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj.

IMBG120R017M2H - Silicon Carbide MOSFET (Infineon)
IMBG120R017M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj.

IMBG120R026M2H - 1200V SiC MOSFET (Infineon)
IMBG120R026M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj.