IMBG65R163M1H MOSFET

Infineon

Description

IMBG65R163M1H MOSFET 650 V CoolSiCª M1 SiC Trench Power Device The 650 V CoolSiC™ is built over the solid silicon carbide technology developed in Inf.

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Datasheet Specifications

Part number: IMBG65R163M1H
Manufacturer: Infineon ↗
File Size: 1.50 MB
Datasheet: IMBG65R163M1H-Infineon.pdf
Description: MOSFET

Features

* Optimized switching behavior at higher currents
* Commutation robust fast body diode with low Qf
* Superior gate oxide reliability
* Tj,max=175°C and excellent thermal behavior
* Lower RDS(on) and pulse current dependency on temperature
* Increased a

Applications

* Telecom and Server SMPS
* UPS (uninterruptable power supplies)
* Solar PV inverters
* EV charging infrastructure
* Energy storage and battery formation
* Class D amplifiers Product validation Fully qualified according to JEDEC for Industrial Applicat

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IMBG65R163M1H MOSFET Infineon

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