* Optimized switching behavior at higher currents
* Commutation robust fast body diode with low Qf
* Superior gate oxide reliability
* Tj,max=175°C and excellent thermal behavior
* Lower RDS(on) and pulse current dependency on temperature
* Increased a
IMBG65R163M1H Datasheet (1.50 MB)
IMBG65R163M1H
1.50 MB
Mosfet.
IMBG65R163M1H MOSFET 650 V CoolSiCª M1 SiC Trench Power Device The 650 V CoolSiC™ is built over the solid silicon carbide technology developed in Inf.
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