IMDQ75R027M1H - MOSFET
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1 Maximum ratings .
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IMDQ75R027M1H MOSFET CoolSiCª Power Device 750 V G1 PG-HDSOP-22 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in Infineon in more than 20 years.
Leveraging the wide bandgap SiC material characteristics, the 750V CoolSiC™ MOSFET offers a unique combination of performance, reliability and ease of use.
Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.
1 22 12 TAB
IMDQ75R027M1H Features
* Highly robust 750V technology, 100% avalanche tested
* Best-in-class RDS(on) x Qfr
* Excellent RDS(on) x Qoss and RDS(on) x QG
* Unique combination of low Crss/Ciss and high VGS(th)
* Infineon proprietary die attach technology
* Cutting edge top sid
