IMDQ75R027M1H Datasheet - Infineon

IMDQ75R027M1H MOSFET

IMDQ75R027M1H MOSFET CoolSiCª Power Device 750 V G1 PG-HDSOP-22 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap SiC material characteristics, the 750V CoolSiC™ MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency. 1 22 12 TAB .

IMDQ75R027M1H Features

* Highly robust 750V technology, 100% avalanche tested

* Best-in-class RDS(on) x Qfr

* Excellent RDS(on) x Qoss and RDS(on) x QG

* Unique combination of low Crss/Ciss and high VGS(th)

* Infineon proprietary die attach technology

* Cutting edge top sid

IMDQ75R027M1H-Infineon.pdf