IMW65R057M1H Datasheet - Infineon

IMW65R057M1H, 650V MOSFET

Public IMW65R057M1H Final datasheet CoolSiC™ M1 CoolSiC™ MOSFET 650 V G1 The 650 V CoolSiC™ is built over the solid silicon carbide technology develo.
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Datasheet Details

Part number:

IMW65R057M1H

Manufacturer:

Infineon ↗

File Size:

1.09 MB

Description:

650V MOSFET

Features

* Optimized switching behavior at higher currents
* Commutation robust fast body diode with low Qfr
* Superior gate oxide reliability
* Tj,max=175°C and excellent thermal behavior
* Lower RDS(on) and pulse current dependency on temperature
* Increased

Applications

* SMPS
* UPS (uninterruptable power supplies)
* Solar PV inverters
* EV charging infrastructure
* Energy storage and battery formation
* Class D amplifiers Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Key p

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