IMW65R057M1H Datasheet - Infineon

IMW65R057M1H 650V MOSFET

IMW65R057M1H Features

* Optimized switching behavior at higher currents

* Commutation robust fast body diode with low Qfr

* Superior gate oxide reliability

* Tj,max=175°C and excellent thermal behavior

* Lower RDS(on) and pulse current dependency on temperature

* Increased

Datasheet Details

IMW65R057M1H

1.09 MB

650v mosfet.

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IMW65R057M1H 650V MOSFET Infineon

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