IMW65R026M2H - 650V SiC MOSFET
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1 Maximum ratings .
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IMW65R026M2H Features
* Ultra‑low switching losses
* Benchmark gate threshold voltage, VGS(th) = 4.5 V
* Robust against parasitic turn‑on even with 0 V turn‑off gate voltage
* Flexible driving voltage and compatible with bipolar driving scheme
* Robust body diode operation under ha
