IMW65R026M2H Datasheet - Infineon

IMW65R026M2H 650V SiC MOSFET

IMW65R026M2H Features

* Ultra‑low switching losses

* Benchmark gate threshold voltage, VGS(th) = 4.5 V

* Robust against parasitic turn‑on even with 0 V turn‑off gate voltage

* Flexible driving voltage and compatible with bipolar driving scheme

* Robust body diode operation under ha

Datasheet Details

IMW65R026M2H

1.12 MB

650v sic mosfet.

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IMW65R026M2H IMW65R026M2H 650V SiC MOSFET Infineon

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