Datasheet Details
- Part number
- IMW65R026M2H
- Manufacturer
- Infineon ↗
- File Size
- 1.12 MB
- Datasheet
- IMW65R026M2H-Infineon.pdf
- Description
- 650V SiC MOSFET
IMW65R026M2H Description
Public IMW65R026M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, .
1 Maxi.
IMW65R026M2H Features
* Ultra‑low switching losses
* Benchmark gate threshold voltage, VGS(th) = 4.5 V
* Robust against parasitic turn‑on even with 0 V turn‑off gate voltage
* Flexible driving voltage and compatible with bipolar driving scheme
* Robust body diode operation under ha
IMW65R026M2H Applications
* SMPS
* Solar PV inverters
* Energy storage and battery formation
* UPS
* EV charging infrastructure
* Motor drives
Product validation
Fully qualified according to JEDEC for Industrial Applications
Table 1 Key Performance Parameters
Parameter
Value
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