IMW65R015M2H
1.49MB
Mosfet. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TAGS
📁 Related Datasheet
IMW65R007M2H - MOSFET
(Infineon)
IMW65R007M2H
MOSFET
CoolSiCª MOSFET 650 V G2
Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET d.
IMW65R020M2H - MOSFET
(Infineon)
IMW65R020M2H
MOSFET
CoolSiCª MOSFET 650 V G2
Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET d.
IMW65R027M1H - MOSFET
(Infineon)
IMW65R027M1H
MOSFET
650 V CoolSiCª M1 SiC Trench Power Device
The 650 V CoolSiC™ is built over the solid silicon carbide technology developed in Infi.
IMW65R039M1H - MOSFET
(Infineon)
Public
IMW65R039M1H Final datasheet
CoolSiC™ M1
CoolSiC™ MOSFET 650 V G1
The 650 V CoolSiC™ is built over the solid silicon carbide technology develo.
IMW65R040M2H - MOSFET
(Infineon)
IMW65R040M2H
MOSFET
CoolSiCª MOSFET 650 V G2
Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET d.
IMW65R050M2H - MOSFET
(Infineon)
IMW65R050M2H
MOSFET
CoolSiCª MOSFET 650 V G2
Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET d.
IMW65R107M1H - MOSFET
(Infineon)
IMW65R107M1H
MOSFET
650 V CoolSiCª M1 SiC Trench Power Device
The 650 V CoolSiC™ is built over the solid silicon carbide technology developed in Infi.
IMW120R007M1H - MOSFET
(Infineon)
IMW120R007M1H
CoolSiC™ 1200 V SiC Trench MOSFET
CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET
Features • VDSS = 1200 V at Tvj = 25°C • ID.
IMW120R020M1H - MOSFET
(Infineon)
IMW120R020M1H
CoolSiC™ 1200 V SiC Trench MOSFET
CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET
Features • VDSS = 1200 V at Tvj = 25°C • ID.
IMW120R030M1H - MOSFET
(Infineon)
IMW120R030M1H
IMW120R030M1H
CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET
Features
Very low switching losses Threshold-free on state c.