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IMW65R010M2H Datasheet - Infineon

SiC MOSFET

IMW65R010M2H Features

* Ultra‑low switching losses

* Benchmark gate threshold voltage, VGS(th) = 4.5 V

* Robust against parasitic turn‑on even with 0 V turn‑off gate voltage

* Flexible driving voltage and compatible with bipolar driving scheme

* Robust body diode operation under ha

IMW65R010M2H Datasheet (1.12 MB)

Preview of IMW65R010M2H PDF

Datasheet Details

Part number:

IMW65R010M2H

Manufacturer:

Infineon ↗

File Size:

1.12 MB

Description:

Sic mosfet.
Public IMW65R010M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, .

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IMW65R010M2H SiC MOSFET Infineon

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