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IMW65R027M1H

650V MOSFET

IMW65R027M1H Features

* Optimized switching behavior at higher currents

* Commutation robust fast body diode with low Qfr

* Superior gate oxide reliability

* Tj,max=175°C and excellent thermal behavior

* Lower RDS(on) and pulse current dependency on temperature

* Increased

IMW65R027M1H General Description

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IMW65R027M1H Datasheet (1.09 MB)

Preview of IMW65R027M1H PDF

Datasheet Details

Part number:

IMW65R027M1H

Manufacturer:

Infineon ↗

File Size:

1.09 MB

Description:

650v mosfet.
Public IMW65R027M1H Final datasheet CoolSiC™ M1 CoolSiC™ MOSFET 650 V G1 The 650 V CoolSiC™ is built over the solid silicon carbide technology develo.

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TAGS

IMW65R027M1H 650V MOSFET Infineon

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