* Ultra-low switching losses
* Benchmark gate threshold voltage, VGS(th) = 4.5 V
* Robust against parasitic turn-on even with 0 V turn-off gate voltage
* Flexible driving voltage and compatible with bipolar driving scheme
* Robust body diode operation under ha
IMW65R007M2H Datasheet (1.46 MB)
IMW65R007M2H
1.46 MB
Mosfet.
IMW65R007M2H
MOSFET
CoolSiCª MOSFET 650 V G2
Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET d.
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