IMZA75R008M1H Datasheet - Infineon

IMZA75R008M1H 750V MOSFET

Public IMZA75R008M1H Final datasheet CoolSiC™ M1 CoolSiC™ Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap SiC material characteristics, the 750V CoolSiC™ MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency. Featu.

IMZA75R008M1H Features

* Highly robust 750V technology, 100% avalanche tested

* Best‑in‑class RDS(on) x Qfr

* Excellent RDS(on) x Qoss and RDS(on) x QG

* Unique combination of low Crss/Ciss and high VGS(th)

* Infineon proprietary die attach technology

* Driver source pin ava

IMZA75R008M1H-Infineon.pdf