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IPB025N10N3G MOSFET

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Description

OptiMOS™3 Power-Transistor .

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Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Extremely low on-resistance R DS(on)
* High current capability
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC1) f

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