IPB029N06N3
0.97MB
Power transistor.
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IPB029N06N3 - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
IPB029N06N3
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance .
IPB029N06N3G - Power-Transistor
(Infineon Technologies)
Ie\Q
%&$ #™3 Power-Transistor
Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3
B53
Q( @D9=9J54 D53 8>? 7I 6? B 3 ? >F5BD5BC Q .
IPB029N06NF2S - MOSFET
(Infineon)
IPB029N06NF2S
MOSFET
StrongIRFETTM2 Power-Transistor
Features
• Optimized for wide range of applications • N-channel, normal level • 100% avalanche t.
IPB029N15NM6 - MOSFET
(Infineon)
Public
IPB029N15NM6 Final datasheet
MOSFET
OptiMOS™ 6 Power‑Transistor, 150 V
Features
• N‑channel, normal level • Very low on‑resistance RDS(on) • .
IPB020N08N5 - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOSTM
OptiMOSª 5 Power-Transistor, 80 V IPB020N08N5
Data Sheet
Rev. 2.0 Final
Power Manag.
IPB020N10N5 - MOSFET
(Infineon)
IPB020N10N5
MOSFET
OptiMOSª5 Power-Transistor, 100 V
Features
• N-channel, normal level • Optimized for FOMOSS • Very low on-resistance RDS(on) • 175.
IPB020N10N5 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263(D2PAK) packaging ·Ultra-fast body diode ·High speed switching ·Very low on-resistence ·Easy to .
IPB020N10N5LF - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
IPB020N10N5LF
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistanc.
IPB020N10N5LF - MOSFET
(Infineon)
IPB020N10N5LF
MOSFET
OptiMOSTM 5 Linear FET, 100 V
Features
• Ideal for hot-swap and e-fuse applications • Very low on-resistance RDS(on) • Wide saf.
IPB021N06N3 - Power Transistor
(Infineon)
Ie\Q
%&$ #™3 Power-Transistor
Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3
B53
Q( @D9=9J54 D53 8>? 7I 6? B 3 ? >F5BD5BC Q .