IPB180N10S4-02 Power-Transistor

Infineon

Description

OptiMOSTM-T2 Power-Transistor .

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Datasheet Specifications

Part number: IPB180N10S4-02
Manufacturer: Infineon ↗
File Size: 743.83 KB
Datasheet: IPB180N10S4-02-Infineon.pdf
Description: Power-Transistor

Features

* N-channel - Enhancement mode
* AEC Q101 qualified
* MSL1 up to 260°C peak reflow
* 175°C operating temperature
* RoHS compliant
* 100% Avalanche tested IPB180N10S4-02 Product Summary VDS RDS(on) ID 100 V 2.5 mW 180 A PG-TO263-7-3 Type IPB180N10S

IPB180N10S4-02 Distributors

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IPB180N10S4-02 Power-Transistor Infineon

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