IPB60R060C7 Datasheet, Mosfet, Infineon

IPB60R060C7 Features

  • Mosfet
  • Suitable for hard and soft switching (PFC and high performance LLC)
  • Increased MOSFET dv/dt ruggedness to 120V/ns
  • Increased efficiency due to best in class

PDF File Details

Part number:

IPB60R060C7

Manufacturer:

Infineon ↗

File Size:

1.36MB

Download:

📄 Datasheet

Description:

Mosfet. CoolMOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and

Datasheet Preview: IPB60R060C7 📥 Download PDF (1.36MB)
Page 2 of IPB60R060C7 Page 3 of IPB60R060C7

IPB60R060C7 Application

  • Applications according to JEDEC (J-STD20 and JESD22) Benefits
  • Increased economies of scale by use in PFC and PWM topologies in the applica

TAGS

IPB60R060C7
MOSFET
Infineon

📁 Related Datasheet

IPB60R060C7 - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor IPB60R060C7 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance .

IPB60R060P7 - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor IPB60R060P7 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance .

IPB60R060P7 - MOSFET (Infineon)
IPB60R060P7 MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFET.

IPB60R040C7 - MOSFET (Infineon)
IPB60R040C7 MOSFET 600V CoolMOSª C7 Power Transistor CoolMOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to .

IPB60R040C7 - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor IPB60R040C7 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance .

IPB60R080P7 - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor IPB60R080P7 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance .

IPB60R080P7 - MOSFET (Infineon)
IPB60R080P7 MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFET.

IPB60R099C6 - MOSFET (Infineon Technologies)
FGK@?L FTcP[ GgXST KT\XR^]SdRc^a @XT[S ?UUTRc LaP]bXbc^a =^^[FGKm =6 6**M =^^[FGKm =6 H^fTa LaP]bXbc^a CHx6*J099=6 >PcP KWTTc Rev. 2.3 @X]P[ H^fTa FP].

IPB60R099C6 - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor IPB60R099C6 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance .

IPB60R099C7 - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor IPB60R099C7 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance .

Stock and price

Infineon Technologies AG
MOSFET N-CH 650V 35A TO263-3
DigiKey
IPB60R060C7ATMA1
299 In Stock
Qty : 500 units
Unit Price : $3.14
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts