IPB90R340C3 Datasheet, Power-transistor, Infineon

IPB90R340C3 Features

• Power-transistor
• Lowest figure-of-merit RON x Qg
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for industrial applications

PDF File Details

Part number:

IPB90R340C3

Manufacturer:

Infineon ↗

File Size:

909.98kb

Download:

📄 Datasheet

Description:

Power-transistor.

IPB90R340C3 Application

• Applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge Product Summary VDS @ TJ=25°C RDS(on),max @TJ=25°C Qg,t

TAGS

IPB90R340C3

Infineon

📁 Related Datasheet

IPB90R340C3 - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor IPB90R340C3 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance .

IPB90N04S4-02 - Power-Transistor (Infineon)
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr.

IPB90N06S4-04 - Power Transistor (Infineon Technologies)
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr.

IPB90N06S4L-04 - Power-Transistor (Infineon)
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature.

IPB009N03L - MOSFET (Infineon)
IPB009N03L G MOSFET OptiMOSª3 Power-Transistor, 30 V Features • MOSFET for ORing and Uninterruptible Power Supply • Qualified according to JEDEC1) f.

IPB009N03LG - MOSFET (Infineon Technologies)
IPB009N03L G MOSFET OptiMOSª3 Power-Transistor, 30 V Features • MOSFET for ORing and Uninterruptible Power Supply • Qualified according to JEDEC1) f.

IPB010N06N - MOSFET (Infineon)
IPB010N06N MOSFET OptiMOSTM Power-Transistor, 60 V Features • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resi.

IPB011N04L - Power Transistor (Infineon)
Jf^S %&$ #E  $ ;B 1='=-: >5>?;= 6MI[\YMZ R' ) - . 8AC) , ;@9 3 @6 / @;@E7CCFBE;4>7 * AH7C- FBB>J R+ F3 >;8;76 3 55AC6;@9 EA $ )# 8ACE3 C.

IPB011N04LG - Power Transistor (Infineon Technologies)
Jf^S $      %&$ #E  $ ;B 1= '= -: >5 >? ;= 6MI[\YMZ R' ) - . 8 AC ) ,; @9 3 @6 / @; @E 7C C FBE ; 4> 7 * AH7C - FBB> J R + F3 > ;.

IPB011N04NF2S - MOSFET (Infineon)
IPB011N04NF2S MOSFET StrongIRFETTM2 Power-Transistor Features • Optimized for wide range of applications • N-channel, normal level • 100% avalanche t.